Qualcomm Snapdragon 8 Elite Galaxy vs Apple A9 (Samsung) Full Specs

Summary

8 Cores(2P+6E) 8 Threads(2P+6E) 4.47GHz	2 Cores 2 Threads 1.85GHz
TDP 5W	TDP 5W
Bandwidth 84.8GB/s LPDDR5X	Bandwidth 25.6GB/s LPDDR4
iGPU Adreno 830	iGPU PowerVR GT7600 A9
Peak·FP32·FP16 6.76 TFLOPSFP16	Peak·FP32·FP16 499.2 GFLOPSFP16

Highlights

Geekbench 6 Single

Geekbench 6 Single Geekbench 6 Multi Max Bandwidth iGPU Peak iGPU FP32 iGPU FP16 NPU TOPS TDP

Snapdragon 8 Elite Galaxy3,220

x5.00

A9 (Samsung)644

x1

Show Top Score

Core Config

8 Cores 2P 6E	2 Cores 2P -
8 Threads 2P 6E	2 Threads 2P -

Clocks

Base Clock 4.47GHz	Base Clock 1.85GHz
Overclocking Locked	Overclocking Locked

Cache

L1i 128KB P 64KB E	L1i 64KB P -
L1d 64KB P 64KB E	L1d 64KB P -
L2 12MB P shared 12MB E shared	L2 3MB P shared -
L3 -	L3 4MB
SLC Cache 8MB	SLC Cache -

Memory

Type LPDDR5X	Type LPDDR4
Max Memory 24GB	Max Memory 2GB
ECC No	ECC No
Channels 4	Channels 1
Bus Width 64-bit	Bus Width 64-bit
Speed 10600MT/s	Speed 3200MT/s
Bandwidth 84.8GB/s	Bandwidth 25.6GB/s
Bandwidth Calculator Channels Transfer Rate10600MT/s Calculated Bandwidth 84.8GB/s	Bandwidth Calculator Channels Transfer Rate3200MT/s Calculated Bandwidth 25.6GB/s

Power & Thermals

TDP 5W	TDP 5W
Peak Power 17W	Peak Power -

iGPU

iGPU Adreno 830	iGPU PowerVR GT7600 A9
Shaders 1536	Shaders 192
Boost Clock 1.1GHz	Boost Clock 650MHz
Peak·FP32·FP16 6.76 TFLOPSFP16	Peak·FP32·FP16 499.2 GFLOPSFP16

NPU

NPU Model Hexagon	NPU Model -
Performance 45 TOPSINT8	Performance -

Cellular

Modem Model X80	Modem Model -
Cellular 5G mmWave	Cellular -
Peak Down Up to 10.0Gbps	Peak Down -
Peak Up Up to 3.5Gbps	Peak Up -

Chip

Manufacturer Qualcomm	Manufacturer Apple
ISA AArch64	ISA AArch64
Architecture Oryon 2ARMv8.7-A	Architecture Apple Silicon 4ARMv8.0-A
Family 8 Series	Family A Series
Branding	Branding
Codename - Snapdragon 8 EliteVariant Phoenix-PP-Core Phoenix-EE-Core	Codename Maui A9 SamsungVariant TwisterP-Core -
Market Segment Smartphone	Market Segment Smartphone
Release Date Oct 21, 2024	Release Date Sep 25, 2015

Fabrication

Foundry TSMC	Foundry Samsung
Fabrication Node N3E	Fabrication Node 14LPP
Die Size 124mm²	Die Size 96mm²
Transistor Count -	Transistor Count 2.5 Billion
Transistor Density -	Transistor Density 26 MTr/mm²

Images

No images available

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Used In

Smartphones Galaxy S25Galaxy S25+Galaxy S25 Ultra	Smartphones iPhone 6SiPhone SE(Gen 1)
Tablets -	Tablets iPad 5(A9, Early 2017)

Competitors

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