NVIDIA GeForce RTX 2070 Max-Q vs NVIDIA GeForce RTX 3060 Laptop 110W Full Specs
2,304 Shaders 1.19GHz | 3,840 Shaders 1.68GHz |
8GB GDDR6384GB/s | 6GB GDDR6336GB/s |
·· 5.46 TFLOPS | ·· 12.9 TFLOPS |
Form Factor Soldered | Form Factor Soldered |
TDP 80W | TDP 110W |
Clock Speed ··· | Clock Speed ··· |
Peak OPS 10.92 TFLOPSFP16 | Peak OPS 412.9 TOPSINT4 Tensor Sparse |
- | Tensor FP16-16 51.61 TFLOPSFP16-16 Tensor Sparse 103.2 TFLOPSTensor FP16-32 25.8 TFLOPSFP16-32 Tensor Sparse 51.61 TFLOPS |
- | BF16 12.9 TFLOPSTensor BF16 25.8 TFLOPSBF16 Tensor Sparse 51.61 TFLOPS |
Tensor TF32 - | Tensor TF32 12.9 TFLOPS |
FP32 5.46 TFLOPS | FP32 12.9 TFLOPS |
FP64 170.6 GFLOPS | FP64 201.6 GFLOPS |
Tensor INT4 - | Tensor INT4 206.4 TOPS |
- | Tensor INT8 103.2 TOPS |
Ray - | Ray 19.46 TOPS |
Pixel Rate 75.8 GPixel/s | Pixel Rate 80.6 GPixel/s |
Texture Rate 170.6 GTexel/s | Texture Rate 201.6 GTexel/s |
Shaders 2,304 Shaders | Shaders 3,840 Shaders |
TMUs 144 TMUs | TMUs 120 TMUs |
ROPs 64 ROPs | ROPs 48 ROPs |
Tensor Cores 288 T-Cores | Tensor Cores 120 T-Cores |
RT Cores 36 RT-Cores | RT Cores 30 RT-Cores |
SMs 36 SMs | SMs 30 SMs |
Base Clock 885MHz | Base Clock 1.34GHz |
Boost Clock 1.19GHz | Boost Clock 1.68GHz |
L2 Cache 4.1MB shared | L2 Cache 3.1MB shared |
8GB GDDR6 | 6GB GDDR6 |
Memory Bus 256-bit | Memory Bus 192-bit |
Memory Speed 12GT/s | Memory Speed 14GT/s |
Memory Bandwidth 384GB/s | Memory Bandwidth 336GB/s |
ECC No | ECC No |
TDP 80W | TDP 110W |
Multi-Monitor 3 | Multi-Monitor 3 |
HDCP HDCP 2.2 | HDCP HDCP 2.3 |
Encoder Model NVENC 7 | Encoder Model NVENC 7 |
Decoder Model NVDEC 4 | Decoder Model NVDEC 5 |
Form Factor Soldered | Form Factor Soldered |
Manufacturer | Manufacturer |
Chip Designer | Chip Designer |
Architecture | Architecture |
Family | Family |
Branding ![]() | Branding ![]() |
Codename NV166 | Codename NV176 |
Chip Variant TU106-125-A1 | Chip Variant GA106-150-KA-A1 |
Market Segment Laptop | Market Segment Laptop |
Release Date Jan 29, 2019 | Release Date Feb 25, 2021 |
Foundry TSMC | Foundry Samsung |
Fabrication Node 12FFN | Fabrication Node 8N |
Die Size 445mm² | Die Size 276mm² |
Transistor Count 10.8 Billion | Transistor Count 13.3 Billion |
Transistor Density 24.27 MTr/mm² | Transistor Density 48.01 MTr/mm² |
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