Gen 1
256GB Apple 6+12 Pin
Storage Comparison
Capacity 256GB |
Sequential Read 240MB/s |
Sequential Write 220MB/s |
Form Factor Apple 6+12 Pin |
Interface SATA |
Protocol AHCI |
Controller S3C2400 |
NAND MLC |
Gen 1240MB/sCapacity 256GB |
Sequential Read 240MB/s |
Sequential Write 220MB/s |
Rand Read IOPS 31K IOPS |
Rand Write IOPS 21K IOPS |
Form Factor Apple 6+12 Pin |
Interface SATA II |
Protocol AHCI |
Designer Samsung |
Model S3C2400 |
Part Number S3C29MAX01 |
Foundry Samsung |
Cores 2 |
Clock 220MHz |
DRAM Size 256MB |
DRAM Type DDR2 |
DRAM Bus Width 16-bit |
Speed 1333MT/s |
Manufacturer Samsung |
Process Node 32nm |
Type MLC |
Die Size 159mm² |
Die Capacity 32Gbit |
Die Bit Density 0.2Gbit/mm² |
NAND Chip Count 8 |
NAND Die Count 64 |
NAND Dies/Chip 8 |
Write Endurance 22TBW |
MTBF 1.5M hours |
Height 24mm (0.94")Width 110mm (4.33")Depth 2.4mm (0.09") |
Manufacturer Apple |
Model Gen 1 |
Description 256GB Apple 6+12 Pin |
Part Number SM256C |
Part Number 2 MZ-CPA256 |