Storage Comparison
Capacity 128GB |
Sequential Read 520MB/s |
Sequential Write 320MB/s |
Form Factor Apple 7+17 Pin |
Interface SATA |
Protocol AHCI |
Controller MCX |
NAND MLC |
Capacity 128GB |
Sequential Read 520MB/s |
Sequential Write 320MB/s |
Rand Read IOPS 80K IOPS |
Rand Write IOPS 30K IOPS |
Form Factor Apple 7+17 Pin |
Interface SATA III |
Protocol AHCI |
Designer Samsung |
Model MCX |
Part Number S4LJ204X01 |
Foundry Samsung |
Process Node 40nm |
Cores 3 |
Clock 220 MHz |
DRAM Size 128MB |
DRAM Type DDR2 |
DRAM Bus Width 32-bit |
Speed 1600MT/s |
DRAM Bandwidth 6.4GB/s |
Manufacturer Samsung |
Process Node 27nm |
Type MLC |
Die Size 133mm² |
Die Capacity 32Gbit |
Die Bit Density 0.24Gbit/mm² |
NAND Chip Count 8 |
NAND Die Count 32 |
NAND Dies/Chip 4 |
MTBF 1.5M hours |
Height 24 mm (0.94")Width 110 mm (4.33")Depth 2.4 mm (0.09") |
Manufacturer Apple |
Model Gen 2 |
Description 128GB Apple 7+17 Pin |
Part Number SM128E |
Part Number 2 MZ-EPC128 |
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