Storage Comparison
Capacity 512GB |
Sequential Read 540MB/s |
Sequential Write 450MB/s |
Form Factor 2.5" |
Interface SATA |
Protocol AHCI |
Controller MDX |
NAND MLC |
Capacity 512GB |
Sequential Read 540MB/s |
Sequential Write 450MB/s |
Rand Read IOPS 100K IOPS |
Rand Write IOPS 78K IOPS |
Form Factor 2.5" |
Interface SATA III |
Protocol AHCI |
Designer Samsung |
Model MDX |
Part Number S4LN021X01 |
Foundry Samsung |
Process Node 32nm |
Cores 3 |
Clock 300MHz |
DRAM Size 512MB |
DRAM Type LPDDR2 |
DRAM Bus Width 32-bit |
Speed 2133MT/s |
Manufacturer Samsung |
Process Node 21nm |
Type MLC |
Die Size 162mm² |
Die Capacity 64Gbit |
Die Bit Density 0.4Gbit/mm² |
NAND Chip Count 8 |
NAND Die Count 64 |
NAND Dies/Chip 8 |
AES-128 Yes |
AES-256 Yes |
TCG Opal 2.0 No |
IEEE 1667 No |
Power Loss Protection No |
Write Endurance 73TBW |
MTBF 1.5M hours |
Height 100mm (3.94")Width 69.9mm (2.75")Depth 6.8mm (0.27") |
Weight 45g |
Manufacturer Apple |
Model Gen 2 Pro 2.5" |
Description 512GB 2.5" |
Part Number 2 MZ-5PD5120 |

