Storage Comparison
Capacity 128GB |
Sequential Read 600MB/s |
Sequential Write 450MB/s |
Form Factor Apple 12+16 Pin |
Interface PCIe |
Protocol AHCI |
Controller BNP2 |
NAND MLC |
Capacity 128GB |
Sequential Read 600MB/s |
Sequential Write 450MB/s |
Rand Read IOPS 60K IOPS |
Rand Write IOPS 20K IOPS |
Form Factor Apple 12+16 Pin |
Interface PCIe 2.0 x2 |
Protocol AHCI |
Designer Marvell |
Model BNP2 |
Part Number 88SS9183 |
Foundry Toshiba |
DRAM Size 128MB |
DRAM Type LPDDR2 |
DRAM Bus Width 32-bit |
Speed 2133MT/s |
DRAM Bandwidth 8.53GB/s |
Manufacturer Toshiba |
Process Node 24nm |
Type MLC |
Die Size 200mm² |
Die Capacity 64Gbit |
Die Bit Density 0.32Gbit/mm² |
NAND Chip Count 8 |
NAND Die Count 16 |
NAND Dies/Chip 2 |
MTBF 1.5M hours |
Height 24 mm (0.94")Width 90 mm (3.54")Depth 2.4 mm (0.09") |
Manufacturer Apple |
Model Gen 3 |
Description 128GB Apple 12+16 Pin |
Part Number TS0128F |
Part Number 2 THNSN2128GSPS |
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