Gen 3
512GB Apple 12+16 Pin
Storage Comparison
Capacity 512GB |
Sequential Read 730MB/s |
Sequential Write 680MB/s |
Form Factor Apple 12+16 Pin |
Interface PCIe |
Protocol AHCI |
Controller UAX |
NAND MLC |
Gen 3730MB/sCapacity 512GB |
Sequential Read 730MB/s |
Sequential Write 680MB/s |
Rand Read IOPS 122K IOPS |
Rand Write IOPS 72K IOPS |
Form Factor Apple 12+16 Pin |
Interface PCIe 2.0 x2 |
Protocol AHCI |
Designer Samsung |
Model UAX |
Part Number S4LN053X01 |
Foundry Samsung |
Process Node 32nm |
Cores 3 |
Clock 300MHz |
DRAM Size 512MB |
DRAM Type LPDDR2 |
DRAM Bus Width 32-bit |
Speed 2133MT/s |
Manufacturer Samsung |
Process Node 19nm |
Type MLC |
Die Size 130mm² |
Die Capacity 64Gbit |
Die Bit Density 0.49Gbit/mm² |
NAND Chip Count 8 |
NAND Die Count 64 |
NAND Dies/Chip 8 |
Write Endurance 73TBW |
MTBF 1.5M hours |
Avg Power 5.8W |
Idle Power 80mW |
Height 24mm (0.94")Width 90mm (3.54")Depth 2.4mm (0.09") |
Manufacturer Apple |
Model Gen 3 |
Description 512GB Apple 12+16 Pin |
Part Number SM0512F |
Part Number 2 MZ-JPU512 |