Storage

Storage Comparison

Capacity
768GB
Sequential Read
750MB/s
Sequential Write
700MB/s
Form Factor
Apple 12+16 Pin
Interface
PCIe
Protocol
AHCI
Controller
UAX
NAND
MLC

Capacity
768GB

Sequential Read
750MB/s
Sequential Write
700MB/s
Rand Read IOPS
122K IOPS
Rand Write IOPS
72K IOPS

Form Factor
Apple 12+16 Pin

Interface
PCIe 2.0 x2
Protocol
AHCI

Designer
Samsung
Model
UAX
Part Number
S4LN053X01
Foundry
Samsung
Process Node
32nm
Cores
3
Clock
300 MHz

DRAM Size
512MB
DRAM Type
LPDDR2
DRAM Bus Width
32-bit
Speed
2133MT/s
DRAM Bandwidth
8.53GB/s

Manufacturer
Samsung
Process Node
19nm
Type
MLC
Die Size
130mm²
Die Capacity
64Gbit
Die Bit Density
0.49Gbit/mm²
NAND Chip Count
8
NAND Die Count
128
NAND Dies/Chip
16

Write Endurance
110TBW
MTBF
1.5M hours

Avg Power
5.8W
Idle Power
80mW

Height
32.5 mm (1.28")
Width
90 mm (3.54")
Depth
2.4 mm (0.09")

Manufacturer
Apple
Model
Gen 3 Pro
Description
768GB Apple 12+16 Pin
Part Number
SM0768F
Part Number 2
MZ-KPU768

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