Gen 4
128GB Apple 12+16 Pin
Storage Comparison
Capacity 128GB |
Sequential Read 1.3GB/s |
Sequential Write 690MB/s |
Form Factor Apple 12+16 Pin |
Interface PCIe |
Protocol AHCI |
Controller UBX |
NAND MLC |
Gen 41,320MB/sCapacity 128GB |
Sequential Read 1.3GB/s |
Sequential Write 690MB/s |
Rand Read IOPS 90K IOPS |
Rand Write IOPS 70K IOPS |
Form Factor Apple 12+16 Pin |
Interface PCIe 3.0 x4 |
Protocol AHCI |
Designer Samsung |
Model UBX |
Part Number S4LN058A01 |
Foundry Samsung |
Process Node 32nm |
Cores 3 |
Clock 500MHz |
DRAM Size 256MB |
DRAM Type LPDDR3 |
DRAM Bus Width 32-bit |
Speed 3200MT/s |
Manufacturer Samsung |
Process Node 19nm |
Type MLC |
Die Size 130mm² |
Die Capacity 64Gbit |
Die Bit Density 0.49Gbit/mm² |
NAND Chip Count 8 |
NAND Die Count 16 |
NAND Dies/Chip 2 |
MTBF 1.5M hours |
Avg Power 6.5W |
Idle Power 50mW |
Height 24mm (0.94")Width 90mm (3.54")Depth 2.4mm (0.09") |
Manufacturer Apple |
Model Gen 4 |
Description 128GB Apple 12+16 Pin |
Part Number SM0128G |
Part Number 2 MZ-JPV128 |