L
512GB Soldered
Storage Comparison
Capacity 512GB |
Sequential Read 2.4GB/s |
Sequential Write 1.9GB/s |
Form Factor Soldered |
Interface PCIe |
Protocol NVMe |
Controller Polaris |
NAND 3D MLC (48L) |
L2,400MB/sCapacity 512GB |
Sequential Read 2.4GB/s |
Sequential Write 1.9GB/s |
Form Factor Soldered |
Interface PCIe 3.0 x4 |
Protocol NVMe 1.2 |
Designer Samsung |
Model Polaris |
Part Number S4LP077X01 |
Foundry Samsung |
Process Node 28nm |
Cores 5 |
DRAM Size 512MB |
DRAM Type LPDDR3 |
DRAM Bus Width 32-bit |
Speed 3733MT/s |
Manufacturer Samsung |
Codename V-NAND V3 |
Type 3D MLC (48L) |
Layers 48L |
Die Size 100mm² |
Die Capacity 256Gbit |
Die Bit Density 2.57Gbit/mm² |
NAND Chip Count 4 |
NAND Die Count 16 |
NAND Dies/Chip 4 |
Manufacturer Apple |
Model L |
Description 512GB Soldered |
Part Number SM0512L |