3400
512GB M.2-2280
Storage Comparison
Capacity 512GB |
Sequential Read 6.6GB/s |
Sequential Write 3.6GB/s |
Form Factor M.2-2280 |
Interface PCIe |
Protocol NVMe |
NAND 3D TLC (176L) |
34006,600MB/sCapacity 512GB |
Sequential Read 6.6GB/s |
Sequential Write 3.6GB/s |
Rand Read IOPS 360K IOPS |
Rand Write IOPS 700K IOPS |
Form Factor M.2-2280 |
M.2 Size 2280 |
M.2 Key M |
M.2 Type S2 |
Interface PCIe 4.0 x4 |
Protocol NVMe 1.4 |
Manufacturer Micron |
Codename B47R |
Process Node 20nm |
Type 3D TLC (176L) |
Layers 176L |
Die Size 50mm² |
Die Capacity 512Gbit |
Die Bit Density 10.27Gbit/mm² |
NAND Chip Count 2 |
NAND Die Count 8 |
NAND Dies/Chip 4 |
AES-128 No |
AES-256 Yes |
TCG Opal 2.0 Yes |
IEEE 1667 No |
Power Loss Protection No |
Write Endurance 300TBW |
MTBF 2M hours |
Avg Power 7.5W |
Idle Power 450mW |
Sleep Power 5mW |
Max Op Temp 70°C |
Min Non-Op Temp -40°C |
Max Non-Op Temp 85°C |
Height 22mm (0.87")Width 80mm (3.15")Depth 2.2mm (0.09") |
Manufacturer Micron |
Model 3400 |
Description 512GB M.2-2280 |
Part Number MTFDKBA512TFK |