Storage Comparison
Capacity 512GB |
Sequential Read 7GB/s |
Sequential Write 5.1GB/s |
Form Factor M.2-2280 |
Interface PCIe |
Protocol NVMe |
NAND 3D TLC (232L) |
Capacity 512GB |
Sequential Read 7GB/s |
Sequential Write 5.1GB/s |
Rand Read IOPS 680K IOPS |
Rand Write IOPS 700K IOPS |
Form Factor M.2-2280 |
M.2 Size 2280 |
M.2 Key M |
M.2 Type S2 |
Interface PCIe 4.0 x4 |
Protocol NVMe 2 |
Manufacturer Micron |
Codename B58R |
Process Node 20nm |
Type 3D TLC (232L) |
Layers 232L |
Die Size 70mm² |
Die Capacity 1024Gbit |
Die Bit Density 14.63Gbit/mm² |
NAND Chip Count 1 |
NAND Die Count 4 |
NAND Dies/Chip 4 |
AES-256 Yes |
TCG Opal 2.0 Yes |
Write Endurance 300TBW |
MTBF 2M hours |
Avg Power 8.3W |
Idle Power 400mW |
Sleep Power 5mW |
Max Op Temp 70°C |
Min Non-Op Temp -40°C |
Max Non-Op Temp 85°C |
Height 22 mm (0.87")Width 80 mm (3.15")Depth 2.2 mm (0.09") |
Manufacturer Micron |
Model 3500 |
Description 512GB M.2-2280 |
Part Number MTFDKBA512TGD |
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