Storage Comparison
Capacity 4TB |
Sequential Read 3.2GB/s |
Sequential Write 3GB/s |
Form Factor M.2-2280 |
Interface PCIe |
Protocol NVMe |
Controller E12S |
NAND 3D QLC (96L) |
Price $600 |
Rocket Q3,200MB/sCapacity 4TB |
Sequential Read 3.2GB/s |
Sequential Write 3GB/s |
Seq Write (after SLC cache) 300MB/s |
Rand Read IOPS 550K IOPS |
Rand Write IOPS 680K IOPS |
SLC Cache 1000GB |
Form Factor M.2-2280 |
M.2 Size 2280 |
M.2 Key M |
M.2 Type D5 |
Interface PCIe 3.0 x4 |
Protocol NVMe 1.3 |
Designer Phison |
Model E12S |
Part Number PS5012-E12S-32 |
Foundry TSMC |
Process Node 28nm |
Cores 5 |
Clock 677MHz |
DRAM Size 1GB |
DRAM Type DDR3L |
DRAM Bus Width 16-bit |
Speed 1866MT/s |
Manufacturer Micron |
Codename N28A |
Process Node 20nm |
Type 3D QLC (96L) |
Layers 96L |
Die Size 113mm² |
Die Capacity 1024Gbit |
Die Bit Density 9.09Gbit/mm² |
NAND Chip Count 8 |
NAND Die Count 32 |
NAND Dies/Chip 4 |
SLC Cache 1000GB |
Write Endurance 940TBW |
MTBF 1.8M hours |
Burst Power 6.5W |
Idle Power 49mW |
Sleep Power 1.8mW |
Max Op Temp 70°C |
Min Non-Op Temp -40°C |
Max Non-Op Temp 85°C |
Height 22mm (0.87")Width 80mm (3.15")Depth 3.7mm (0.15") |
Weight 5.7g |
Manufacturer Sabrent |
Model Rocket Q |
Description 4TB M.2-2280 |
Part Number SB-RKTQ-4TB |
Release Date Nov 1, 2019 |
Price $600 |
Warranty 5 years |