Storage Comparison
Capacity 250GB |
Sequential Read 540MB/s |
Sequential Write 520MB/s |
Form Factor 2.5" |
Interface SATA |
Protocol AHCI |
Controller MGX |
NAND TLC |
Capacity 250GB |
Sequential Read 540MB/s |
Sequential Write 520MB/s |
Rand Read IOPS 97K IOPS |
Rand Write IOPS 88K IOPS |
Rand Read QD1 10K IOPS |
Rand Write QD1 35K IOPS |
Form Factor 2.5" |
Interface SATA III |
Protocol AHCI |
Designer Samsung |
Model MGX |
Part Number S4LN062X01 |
Foundry Samsung |
Process Node 32nm |
Cores 3 |
Clock 550 MHz |
DRAM Size 256MB |
DRAM Type LPDDR3 |
DRAM Bus Width 16-bit |
Speed 2133MT/s |
DRAM Bandwidth 4.27GB/s |
Manufacturer Samsung |
Process Node 16nm |
Type TLC |
Die Size 165mm² |
Die Capacity 128Gbit |
Die Bit Density 0.78Gbit/mm² |
NAND Chip Count 2 |
NAND Die Count 16 |
NAND Dies/Chip 8 |
AES-128 Yes |
AES-256 Yes |
TCG Opal 2.0 Yes |
IEEE 1667 Yes |
Write Endurance 70TBW |
MTBF 1.5M hours |
Avg Power 2.8W |
Idle Power 50mW |
Sleep Power 6mW |
Height 100 mm (3.94")Width 69.9 mm (2.75")Depth 6.8 mm (0.27") |
Weight 48 g |
Manufacturer Samsung |
Model 750 EVO |
Description 250GB 2.5" |
Release Date Feb 17, 2016 |
Warranty 3 years |
No images available