Storage Comparison
Capacity 250GB |
Sequential Read 540MB/s |
Sequential Write 520MB/s |
Form Factor 2.5" |
Interface SATA |
Protocol AHCI |
Controller MEX |
NAND TLC |
Price $190 |
Capacity 250GB |
Sequential Read 540MB/s |
Sequential Write 520MB/s |
Seq Write (after SLC cache) 300MB/s |
Rand Read IOPS 97K IOPS |
Rand Write IOPS 66K IOPS |
SLC Cache 3GB |
Form Factor 2.5" |
Interface SATA III |
Protocol AHCI |
Designer Samsung |
Model MEX |
Part Number S4LN045X01 |
Foundry Samsung |
Process Node 32nm |
Cores 3 |
Clock 400 MHz |
DRAM Size 512MB |
DRAM Type LPDDR2 |
DRAM Bus Width 32-bit |
Speed 1066MT/s |
DRAM Bandwidth 4.26GB/s |
Manufacturer Samsung |
Codename Toggle 2.0 |
Process Node 19nm |
Type TLC |
Die Size 130mm² |
Die Capacity 128Gbit |
Die Bit Density 0.98Gbit/mm² |
NAND Chip Count 2 |
NAND Die Count 16 |
NAND Dies/Chip 8 |
SLC Cache 3GB |
AES-128 Yes |
AES-256 Yes |
MTBF 1.5M hours |
Burst Power 3.2W |
Idle Power 30mW |
Height 100 mm (3.94")Width 69.9 mm (2.75")Depth 6.8 mm (0.27") |
Weight 54 g |
Manufacturer Samsung |
Model 840 EVO |
Description 250GB 2.5" |
Release Date Jul 17, 2013 |
Price $190 |
Warranty 3 years |
No images available