850 EVO
120GB 2.5"
Storage Comparison
Capacity 120GB |
Sequential Read 540MB/s |
Sequential Write 520MB/s |
Form Factor 2.5" |
Interface SATA |
Protocol AHCI |
Controller MGX |
NAND 3D TLC (32L) |
850 EVO540MB/sCapacity 120GB |
Sequential Read 540MB/s |
Sequential Write 520MB/s |
Seq Write (after SLC cache) 150MB/s |
Rand Read IOPS 94K IOPS |
Rand Write IOPS 88K IOPS |
Rand Read QD1 10K IOPS |
Rand Write QD1 38K IOPS |
SLC Cache 3GB |
Form Factor 2.5" |
Interface SATA III |
Protocol AHCI |
Designer Samsung |
Model MGX |
Part Number S4LN062X01 |
Foundry Samsung |
Process Node 32nm |
Cores 3 |
Clock 550MHz |
DRAM Size 256MB |
DRAM Type LPDDR3 |
DRAM Bus Width 16-bit |
Speed 2133MT/s |
Manufacturer Samsung |
Codename V-NAND V2 |
Process Node 40nm |
Type 3D TLC (32L) |
Layers 32L |
Die Size 69mm² |
Die Capacity 128Gbit |
Die Bit Density 1.86Gbit/mm² |
NAND Chip Count 1 |
NAND Die Count 8 |
NAND Dies/Chip 8 |
SLC Cache 3GB |
AES-128 Yes |
AES-256 Yes |
TCG Opal 2.0 Yes |
IEEE 1667 Yes |
Power Loss Protection No |
Write Endurance 75TBW |
MTBF 1.5M hours |
Burst Power 3W |
Idle Power 30mW |
Sleep Power 2mW |
Height 100mm (3.94")Width 69.9mm (2.75")Depth 6.8mm (0.27") |
Weight 46g |
Manufacturer Samsung |
Model 850 EVO |
Description 120GB 2.5" |
Release Date Dec 8, 2014 |
Warranty 5 years |