850 EVO
4TB 2.5"
Storage Comparison
Capacity 4TB |
Sequential Read 540MB/s |
Sequential Write 520MB/s |
Form Factor 2.5" |
Interface SATA |
Protocol AHCI |
Controller MHX |
NAND 3D TLC (48L) |
850 EVO540MB/sCapacity 4TB |
Sequential Read 540MB/s |
Sequential Write 520MB/s |
Seq Write (after SLC cache) 520MB/s |
Rand Read IOPS 98K IOPS |
Rand Write IOPS 90K IOPS |
Rand Read QD1 10K IOPS |
Rand Write QD1 40K IOPS |
SLC Cache 48GB |
Form Factor 2.5" |
Interface SATA III |
Protocol AHCI |
Designer Samsung |
Model MHX |
Part Number S4LP052X01 |
Foundry Samsung |
Process Node 28nm |
Cores 3 |
Clock 550MHz |
DRAM Size 4GB |
DRAM Type LPDDR3 |
DRAM Bus Width 16-bit |
Speed 2133MT/s |
Manufacturer Samsung |
Codename V-NAND V3 |
Process Node 20nm |
Type 3D TLC (48L) |
Layers 48L |
Die Size 100mm² |
Die Capacity 256Gbit |
Die Bit Density 2.57Gbit/mm² |
NAND Chip Count 8 |
NAND Die Count 128 |
NAND Dies/Chip 16 |
SLC Cache 48GB |
AES-128 Yes |
AES-256 Yes |
TCG Opal 2.0 Yes |
IEEE 1667 Yes |
Power Loss Protection No |
Write Endurance 300TBW |
MTBF 1.5M hours |
Burst Power 3.2W |
Idle Power 70mW |
Sleep Power 2mW |
Height 100mm (3.94")Width 69.9mm (2.75")Depth 6.8mm (0.27") |
Weight 57g |
Manufacturer Samsung |
Model 850 EVO |
Description 4TB 2.5" |
Release Date May 28, 2016 |
Warranty 5 years |