Storage Comparison
Capacity 256GB |
Sequential Read 550MB/s |
Sequential Write 520MB/s |
Form Factor 2.5" |
Interface SATA |
Protocol AHCI |
Controller MEX |
NAND MLC |
Price $230 |
Capacity 256GB |
Sequential Read 550MB/s |
Sequential Write 520MB/s |
Rand Read IOPS 100K IOPS |
Rand Write IOPS 90K IOPS |
Form Factor 2.5" |
Interface SATA III |
Protocol AHCI |
Designer Samsung |
Model MEX |
Part Number S4LN045X01 |
Foundry Samsung |
Process Node 32nm |
Cores 3 |
Clock 400MHz |
DRAM Size 512MB |
DRAM Type LPDDR2 |
DRAM Bus Width 16-bit |
Speed 1066MT/s |
Manufacturer Samsung |
Codename V-NAND V2 |
Process Node 40nm |
Type MLC |
Die Size 95mm² |
Die Capacity 86Gbit |
Die Bit Density 0.9Gbit/mm² |
NAND Chip Count 4 |
NAND Die Count 32 |
NAND Dies/Chip 8 |
AES-128 Yes |
AES-256 Yes |
TCG Opal 2.0 Yes |
IEEE 1667 Yes |
Power Loss Protection No |
Write Endurance 150TBW |
MTBF 2M hours |
Burst Power 3.5W |
Avg Power 3.2W |
Idle Power 40mW |
Height 100mm (3.94")Width 69.9mm (2.75")Depth 6.8mm (0.27") |
Weight 54g |
Manufacturer Samsung |
Model 850 PRO |
Description 256GB 2.5" |
Release Date Jul 1, 2014 |
Price $230 |
Warranty 10 years |

