Storage Comparison
Capacity 250GB |
Sequential Read 560MB/s |
Sequential Write 520MB/s |
Form Factor M.2 |
Interface SATA |
Protocol AHCI |
Controller MJX |
NAND 3D TLC (64L) |
860 EVO560MB/sCapacity 250GB |
Sequential Read 560MB/s |
Sequential Write 520MB/s |
Seq Write (after SLC cache) 300MB/s |
Rand Read IOPS 100K IOPS |
Rand Write IOPS 90K IOPS |
SLC Cache 12GB |
Form Factor M.2 |
M.2 Size 2280 |
M.2 Key B |
M.2 Type S3 |
Interface SATA III |
Protocol AHCI |
Designer Samsung |
Model MJX |
Part Number S4LR030 |
Foundry Samsung |
Process Node 14nm |
Cores 3 |
Clock 1000MHz |
DRAM Size 512MB |
DRAM Type LPDDR4 |
DRAM Bus Width 16-bit |
Speed 3733MT/s |
Manufacturer Samsung |
Codename V-NAND V4 |
Process Node 20nm |
Type 3D TLC (64L) |
Layers 64L |
Die Size 75mm² |
Die Capacity 256Gbit |
Die Bit Density 3.42Gbit/mm² |
NAND Chip Count 2 |
NAND Die Count 8 |
NAND Dies/Chip 4 |
SLC Cache 12GB |
AES-128 Yes |
AES-256 Yes |
TCG Opal 2.0 Yes |
IEEE 1667 Yes |
Power Loss Protection No |
Write Endurance 150TBW |
MTBF 1.5M hours |
Burst Power 3.3W |
Idle Power 45mW |
Height 22mm (0.87")Width 80mm (3.15")Depth 2.4mm (0.09") |
Weight 9g |
Manufacturer Samsung |
Model 860 EVO |
Description 250GB M.2 |
Release Date Jan 23, 2018 |
Warranty 5 years |