Storage Comparison
Capacity 2TB |
Sequential Read 560MB/s |
Sequential Write 520MB/s |
Form Factor 2.5" |
Interface SATA |
Protocol AHCI |
Controller MJX |
NAND 3D TLC (64L) |
Capacity 2TB |
Sequential Read 560MB/s |
Sequential Write 520MB/s |
Seq Write (after SLC cache) 500MB/s |
Rand Read IOPS 100K IOPS |
Rand Write IOPS 90K IOPS |
SLC Cache 78GB |
Form Factor 2.5" |
Interface SATA III |
Protocol AHCI |
Designer Samsung |
Model MJX |
Part Number S4LR030 |
Foundry Samsung |
Process Node 14nm |
Cores 3 |
Clock 1000 MHz |
DRAM Size 2GB |
DRAM Type LPDDR4 |
DRAM Bus Width 16-bit |
Speed 3733MT/s |
DRAM Bandwidth 7.47GB/s |
Manufacturer Samsung |
Codename V-NAND V4 |
Process Node 20nm |
Type 3D TLC (64L) |
Layers 64L |
Die Size 129mm² |
Die Capacity 512Gbit |
Die Bit Density 3.98Gbit/mm² |
NAND Chip Count 2 |
NAND Die Count 32 |
NAND Dies/Chip 16 |
SLC Cache 78GB |
AES-128 Yes |
AES-256 Yes |
TCG Opal 2.0 Yes |
IEEE 1667 Yes |
Write Endurance 1,200TBW |
MTBF 1.5M hours |
Burst Power 3.3W |
Idle Power 45mW |
Height 100 mm (3.94")Width 69.9 mm (2.75")Depth 6.8 mm (0.27") |
Weight 45 g |
Manufacturer Samsung |
Model 860 EVO |
Description 2TB 2.5" |
Release Date Jan 23, 2018 |
Warranty 5 years |
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