Storage Comparison
Capacity 1TB |
Sequential Read 550MB/s |
Sequential Write 520MB/s |
Form Factor 2.5" |
Interface SATA |
Protocol AHCI |
Controller MJX |
NAND 3D QLC (64L) |
Capacity 1TB |
Sequential Read 550MB/s |
Sequential Write 520MB/s |
Seq Write (after SLC cache) 80MB/s |
Rand Read IOPS 96K IOPS |
Rand Write IOPS 89K IOPS |
Rand Read QD1 8K IOPS |
Rand Write QD1 42K IOPS |
Rand Read TLC/QLC 36K IOPS |
Rand Write TLC/QLC 21K IOPS |
SLC Cache 42GB |
Form Factor 2.5" |
Interface SATA III |
Protocol AHCI |
Designer Samsung |
Model MJX |
Part Number S4LR030 |
Foundry Samsung |
Process Node 14nm |
Cores 3 |
Clock 1000 MHz |
DRAM Size 1GB |
DRAM Type LPDDR4 |
DRAM Bus Width 16-bit |
Speed 3733MT/s |
DRAM Bandwidth 7.47GB/s |
Manufacturer Samsung |
Codename V-NAND V4 |
Process Node 20nm |
Type 3D QLC (64L) |
Layers 64L |
Die Size 180mm² |
Die Capacity 1024Gbit |
Die Bit Density 5.68Gbit/mm² |
NAND Chip Count 1 |
NAND Die Count 8 |
NAND Dies/Chip 8 |
SLC Cache 42GB |
AES-128 Yes |
AES-256 Yes |
TCG Opal 2.0 Yes |
IEEE 1667 Yes |
Write Endurance 360TBW |
MTBF 1.5M hours |
Burst Power 2.2W |
Idle Power 30mW |
Sleep Power 3mW |
Height 100 mm (3.94")Width 69.9 mm (2.75")Depth 6.8 mm (0.27") |
Weight 46 g |
Manufacturer Samsung |
Model 860 QVO |
Description 1TB 2.5" |
Release Date Nov 27, 2018 |
Warranty 3 years |
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