Storage Comparison
Capacity 4TB |
Sequential Read 560MB/s |
Sequential Write 530MB/s |
Form Factor 2.5" |
Interface SATA |
Protocol AHCI |
Controller MKX |
NAND 3D QLC (92L) |
Capacity 4TB |
Sequential Read 560MB/s |
Sequential Write 530MB/s |
Seq Write (after SLC cache) 160MB/s |
Rand Read IOPS 98K IOPS |
Rand Write IOPS 88K IOPS |
Rand Read QD1 11K IOPS |
Rand Write QD1 35K IOPS |
Rand Write TLC/QLC 42K IOPS |
SLC Cache 78GB |
Form Factor 2.5" |
Interface SATA III |
Protocol AHCI |
Designer Samsung |
Model MKX |
Part Number S4LR059 |
Foundry Samsung |
Process Node 14nm |
Cores 3 |
DRAM Size 4GB |
DRAM Type LPDDR4 |
DRAM Bus Width 16-bit |
Speed 3733MT/s |
DRAM Bandwidth 7.47GB/s |
Manufacturer Samsung |
Codename V-NAND V5 |
Process Node 20nm |
Type 3D QLC (92L) |
Layers 92L |
Die Size 136mm² |
Die Capacity 1024Gbit |
Die Bit Density 7.53Gbit/mm² |
NAND Chip Count 4 |
NAND Die Count 32 |
NAND Dies/Chip 8 |
SLC Cache 78GB |
AES-128 Yes |
AES-256 Yes |
TCG Opal 2.0 Yes |
IEEE 1667 Yes |
Write Endurance 1,440TBW |
MTBF 1.5M hours |
Burst Power 3.2W |
Avg Power 2.2W |
Idle Power 35mW |
Sleep Power 7mW |
Height 100 mm (3.94")Width 69.9 mm (2.75")Depth 6.8 mm (0.27") |
Weight 54 g |
Manufacturer Samsung |
Model 870 QVO |
Description 4TB 2.5" |
Part Number MZ-77Q4T0B/AM |
Release Date Jun 30, 2020 |
Warranty 3 years |
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