Storage Comparison
Capacity 1TB |
Sequential Read 14.7GB/s |
Sequential Write 13.3GB/s |
Form Factor M.2-2280 |
Interface PCIe |
Protocol NVMe |
Controller Presto |
NAND 3D TLC (236L) |
Price $200 |
Capacity 1TB |
Sequential Read 14.7GB/s |
Sequential Write 13.3GB/s |
Rand Read IOPS 1,850K IOPS |
Rand Write IOPS 2,600K IOPS |
SLC Cache 114GB |
Form Factor M.2-2280 |
M.2 Size 2280 |
M.2 Key M |
M.2 Type S3 |
Interface PCIe 5.0 x4 |
Protocol NVMe 2 |
Designer Samsung |
Model Presto |
Part Number S4LY027 |
Foundry Samsung |
Process Node 5LPE |
Cores 5 |
DRAM Size 1GB |
DRAM Type LPDDR4X |
DRAM Bus Width 32-bit |
Speed 4266MT/s |
DRAM Bandwidth 17.06GB/s |
Manufacturer Samsung |
Codename V-NAND V8 |
Process Node 20nm |
Type 3D TLC (236L) |
Layers 236L |
Die Size 89mm² |
Die Capacity 1024Gbit |
Die Bit Density 11.51Gbit/mm² |
NAND Chip Count 2 |
NAND Die Count 8 |
NAND Dies/Chip 4 |
SLC Cache 114GB |
AES-128 Yes |
AES-256 Yes |
TCG Opal 2.0 Yes |
IEEE 1667 Yes |
Write Endurance 600TBW |
MTBF 1.5M hours |
Max Op Temp 70°C |
Min Non-Op Temp -40°C |
Max Non-Op Temp 85°C |
Height 22 mm (0.87")Width 80 mm (3.15")Depth 2.3 mm (0.09") |
Weight 9 g |
Manufacturer Samsung |
Model 9100 PRO |
Description 1TB M.2-2280 |
Part Number MZ-VAP1T0 |
Release Date Feb 25, 2025 |
Price $200 |
Warranty 5 years |
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