Storage Comparison
Capacity 1TB |
Sequential Read 3.4GB/s |
Sequential Write 2.5GB/s |
Form Factor M.2-2280 |
Interface PCIe |
Protocol NVMe |
Controller Phoenix |
NAND 3D TLC (64L) |
Capacity 1TB |
Sequential Read 3.4GB/s |
Sequential Write 2.5GB/s |
Seq Write (after SLC cache) 1.2GB/s |
Rand Read IOPS 500K IOPS |
Rand Write IOPS 450K IOPS |
Rand Read QD1 15K IOPS |
Rand Write QD1 50K IOPS |
SLC Cache 42GB |
Form Factor M.2-2280 |
M.2 Size 2280 |
M.2 Key M |
M.2 Type S3 |
Interface PCIe 3.0 x4 |
Protocol NVMe 1.3 |
Designer Samsung |
Model Phoenix |
Part Number S4LR020 |
Foundry Samsung |
Process Node 14nm |
Cores 5 |
DRAM Size 1GB |
DRAM Type LPDDR4 |
DRAM Bus Width 32-bit |
Speed 3733MT/s |
DRAM Bandwidth 14.93GB/s |
Manufacturer Samsung |
Codename V-NAND V4 |
Process Node 20nm |
Type 3D TLC (64L) |
Layers 64L |
Die Size 75mm² |
Die Capacity 256Gbit |
Die Bit Density 3.42Gbit/mm² |
NAND Chip Count 2 |
NAND Die Count 32 |
NAND Dies/Chip 16 |
SLC Cache 42GB |
AES-128 Yes |
AES-256 Yes |
TCG Opal 2.0 Yes |
IEEE 1667 Yes |
Write Endurance 600TBW |
MTBF 1.5M hours |
Burst Power 10W |
Avg Power 6W |
Idle Power 30mW |
Sleep Power 5mW |
Max Op Temp 70°C |
Min Non-Op Temp -45°C |
Max Non-Op Temp 85°C |
Height 22 mm (0.87")Width 80 mm (3.15")Depth 2.4 mm (0.09") |
Manufacturer Samsung |
Model 970 EVO |
Description 1TB M.2-2280 |
Part Number MZ-V7E51T0BW |
Release Date May 7, 2018 |
Warranty 5 years |
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