Storage Comparison
Capacity 1TB |
Sequential Read 3.5GB/s |
Sequential Write 3GB/s |
Form Factor M.2-2280 |
Interface PCIe |
Protocol NVMe |
Controller Pablo |
NAND 3D TLC (128L) |
Price $130 |
Capacity 1TB |
Sequential Read 3.5GB/s |
Sequential Write 3GB/s |
Seq Write (after SLC cache) 430MB/s |
Rand Read IOPS 500K IOPS |
Rand Write IOPS 480K IOPS |
Rand Read QD1 17K IOPS |
Rand Write QD1 54K IOPS |
SLC Cache 160GB |
Form Factor M.2-2280 |
M.2 Size 2280 |
M.2 Key M |
M.2 Type S3 |
Interface PCIe 3.0 x4 |
Protocol NVMe 1.4 |
Designer Samsung |
Model Pablo |
Part Number S4LR033 |
Foundry Samsung |
Process Node 14nm |
Cores 2 |
Manufacturer Samsung |
Codename V-NAND V6 |
Process Node 20nm |
Type 3D TLC (128L) |
Layers 128L |
Die Size 74mm² |
Die Capacity 512Gbit |
Die Bit Density 6.96Gbit/mm² |
NAND Chip Count 1 |
NAND Die Count 16 |
NAND Dies/Chip 16 |
SLC Cache 160GB |
AES-128 Yes |
AES-256 Yes |
TCG Opal 2.0 Yes |
IEEE 1667 Yes |
Write Endurance 600TBW |
MTBF 1.5M hours |
Burst Power 4.5W |
Idle Power 45mW |
Sleep Power 5mW |
Height 22 mm (0.87")Width 80 mm (3.15")Depth 2.4 mm (0.09") |
Weight 8 g |
Manufacturer Samsung |
Model 980 |
Description 1TB M.2-2280 |
Part Number MZ-V8V1T0B/AM |
Release Date Mar 10, 2021 |
Price $130 |
Warranty 5 years |
No images available