Storage Comparison
Capacity 4TB |
Sequential Read 7.5GB/s |
Sequential Write 6.9GB/s |
Form Factor M.2-2280 |
Interface PCIe |
Protocol NVMe |
Controller Pascal |
NAND 3D TLC (176L) |
Capacity 4TB |
Sequential Read 7.5GB/s |
Sequential Write 6.9GB/s |
Rand Read IOPS 1,400K IOPS |
Rand Write IOPS 1,550K IOPS |
Rand Read QD1 22K IOPS |
Rand Write QD1 80K IOPS |
Form Factor M.2-2280 |
M.2 Size 2280 |
M.2 Key M |
M.2 Type S3 |
Interface PCIe 4.0 x4 |
Protocol NVMe 2 |
Designer Samsung |
Model Pascal |
Part Number S4LV008 |
Foundry Samsung |
Process Node 8nm |
Cores 5 |
DRAM Size 4GB |
DRAM Type LPDDR4 |
DRAM Bus Width 32-bit |
Speed 4266MT/s |
DRAM Bandwidth 17.06GB/s |
Manufacturer Samsung |
Codename V-NAND V7 |
Process Node 20nm |
Type 3D TLC (176L) |
Layers 176L |
Die Size 47mm² |
Die Capacity 512Gbit |
Die Bit Density 10.87Gbit/mm² |
NAND Chip Count 2 |
NAND Die Count 64 |
NAND Dies/Chip 32 |
AES-128 Yes |
AES-256 Yes |
TCG Opal 2.0 Yes |
IEEE 1667 Yes |
Write Endurance 2,400TBW |
MTBF 1.5M hours |
Burst Power 8.5W |
Avg Power 5.5W |
Idle Power 55mW |
Sleep Power 5mW |
Max Op Temp 70°C |
Min Non-Op Temp -40°C |
Max Non-Op Temp 85°C |
Height 22 mm (0.87")Width 80 mm (3.15")Depth 2.3 mm (0.09") |
Weight 9 g |
Manufacturer Samsung |
Model 990 PRO |
Description 4TB M.2-2280 |
Part Number MZ-V9P4T0CW |
Release Date Aug 24, 2022 |
Warranty 5 years |
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