Storage Comparison
Capacity 512GB |
Sequential Read 540MB/s |
Sequential Write 500MB/s |
Form Factor M.2 |
Interface SATA |
Protocol AHCI |
Controller MGX |
NAND 3D TLC (32L) |
Capacity 512GB |
Sequential Read 540MB/s |
Sequential Write 500MB/s |
Rand Read IOPS 97K IOPS |
Rand Write IOPS 88K IOPS |
SLC Cache 6GB |
Form Factor M.2 |
M.2 Size 2280 |
M.2 Key B |
M.2 Type S2 |
Interface SATA III |
Protocol AHCI |
Designer Samsung |
Model MGX |
Part Number S4LN062X01 |
Foundry Samsung |
Process Node 32nm |
Cores 3 |
Clock 550 MHz |
DRAM Size 512MB |
DRAM Type LPDDR3 |
DRAM Bus Width 16-bit |
Speed 2133MT/s |
DRAM Bandwidth 4.27GB/s |
Manufacturer Samsung |
Codename V-NAND V2 |
Process Node 40nm |
Type 3D TLC (32L) |
Layers 32L |
Die Size 69mm² |
Die Capacity 128Gbit |
Die Bit Density 1.86Gbit/mm² |
NAND Chip Count 4 |
NAND Die Count 32 |
NAND Dies/Chip 8 |
SLC Cache 6GB |
AES-128 Yes |
AES-256 Yes |
TCG Opal 2.0 Yes |
IEEE 1667 Yes |
Write Endurance 150TBW |
MTBF 1.5M hours |
Burst Power 3W |
Idle Power 35mW |
Sleep Power 2mW |
Height 22 mm (0.87")Width 80 mm (3.15")Depth 2.3 mm (0.09") |
Weight 8 g |
Manufacturer Samsung |
Model PM871b |
Description 512GB M.2 |
Part Number MZNLN512HCJH |
Release Date Mar 22, 2017 |
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