Storage Comparison
Capacity 512GB |
Sequential Read 560MB/s |
Sequential Write 530MB/s |
Form Factor M.2 |
Interface SATA |
Protocol AHCI |
Controller MKX |
NAND 3D TLC (128L) |
Capacity 512GB |
Sequential Read 560MB/s |
Sequential Write 530MB/s |
Rand Read IOPS 98K IOPS |
Rand Write IOPS 88K IOPS |
Form Factor M.2 |
M.2 Size 2280 |
M.2 Key B |
M.2 Type S2 |
Interface SATA III |
Protocol AHCI |
Designer Samsung |
Model MKX |
Part Number S4LR059 |
Foundry Samsung |
Process Node 14nm |
Cores 3 |
DRAM Size 512MB |
DRAM Type LPDDR4 |
DRAM Bus Width 16-bit |
Speed 3733MT/s |
DRAM Bandwidth 7.47GB/s |
Manufacturer Samsung |
Codename V-NAND V6 |
Process Node 20nm |
Type 3D TLC (128L) |
Layers 128L |
Die Size 74mm² |
Die Capacity 512Gbit |
Die Bit Density 6.96Gbit/mm² |
NAND Chip Count 1 |
NAND Die Count 8 |
NAND Dies/Chip 8 |
AES-128 Yes |
AES-256 Yes |
TCG Opal 2.0 Yes |
IEEE 1667 Yes |
Write Endurance 300TBW |
MTBF 1.5M hours |
Burst Power 3.5W |
Avg Power 2.2W |
Idle Power 30mW |
Sleep Power 2.5mW |
Height 22 mm (0.87")Width 80 mm (3.15")Depth 2.3 mm (0.09") |
Weight 8 g |
Manufacturer Samsung |
Model PM881 |
Description 512GB M.2 |
Part Number MZNLH512HALU |
Release Date Sep 28, 2020 |
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