Storage Comparison
Capacity 256GB |
Sequential Read 1.6GB/s |
Sequential Write 300MB/s |
Form Factor M.2-2280 |
Interface PCIe |
Protocol NVMe |
Controller UBX |
NAND TLC |
Capacity 256GB |
Sequential Read 1.6GB/s |
Sequential Write 300MB/s |
Rand Read IOPS 250K IOPS |
Rand Write IOPS 76K IOPS |
Rand Read QD1 11K IOPS |
Rand Write QD1 54K IOPS |
Form Factor M.2-2280 |
M.2 Size 2280 |
M.2 Key M |
M.2 Type S3 |
Interface PCIe 3.0 x4 |
Protocol NVMe 1 |
Designer Samsung |
Model UBX |
Part Number S4LN058A01 |
Foundry Samsung |
Process Node 32nm |
Cores 3 |
Clock 500 MHz |
DRAM Size 512MB |
DRAM Type LPDDR3 |
DRAM Bus Width 32-bit |
Speed 3200MT/s |
DRAM Bandwidth 12.8GB/s |
Manufacturer Samsung |
Codename Toggle 2.0 |
Process Node 19nm |
Type TLC |
Die Size 130mm² |
Die Capacity 128Gbit |
Die Bit Density 0.98Gbit/mm² |
NAND Chip Count 4 |
NAND Die Count 16 |
NAND Dies/Chip 4 |
AES-128 Yes |
AES-256 Yes |
TCG Opal 2.0 Yes |
MTBF 1.5M hours |
Avg Power 4.5W |
Sleep Power 2.5mW |
Max Op Temp 70°C |
Min Non-Op Temp -40°C |
Max Non-Op Temp 85°C |
Height 22 mm (0.87")Width 80 mm (3.15")Depth 2.4 mm (0.09") |
Weight 8 g |
Manufacturer Samsung |
Model PM951 |
Description 256GB M.2-2280 |
Part Number MZVLV256HCHP |
Release Date Nov 11, 2015 |
No images available