Storage Comparison
Capacity 512GB |
Sequential Read 1.5GB/s |
Sequential Write 900MB/s |
Form Factor Soldered |
Interface PCIe |
Protocol NVMe |
Controller Photon |
NAND 3D TLC (48L) |
Capacity 512GB |
Sequential Read 1.5GB/s |
Sequential Write 900MB/s |
Rand Read IOPS 180K IOPS |
Rand Write IOPS 170K IOPS |
Form Factor Soldered |
Interface PCIe 3.0 x2 |
Protocol NVMe 1.3 |
Model Photon |
DRAM Size 512MB |
DRAM Type LPDDR4 |
DRAM Bus Width 32-bit |
Speed 3733MT/s |
DRAM Bandwidth 14.93GB/s |
Manufacturer Samsung |
Codename V-NAND V3 |
Process Node 20nm |
Type 3D TLC (48L) |
Layers 48L |
Die Size 100mm² |
Die Capacity 256Gbit |
Die Bit Density 2.57Gbit/mm² |
NAND Chip Count 1 |
NAND Die Count 16 |
NAND Dies/Chip 16 |
AES-128 Yes |
AES-256 Yes |
TCG Opal 2.0 Yes |
IEEE 1667 Yes |
MTBF 1.5M hours |
Avg Power 3W |
Idle Power 60mW |
Sleep Power 5mW |
Max Op Temp 70°C |
Min Non-Op Temp -40°C |
Max Non-Op Temp 85°C |
Manufacturer Samsung |
Model PM971a |
Description 512GB Soldered |
Part Number KUS040205A |
Release Date Oct 22, 2018 |
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