Storage Comparison
Capacity 512GB |
Sequential Read 3.5GB/s |
Sequential Write 2.9GB/s |
Form Factor M.2-2280 |
Interface PCIe |
Protocol NVMe |
Controller Phoenix |
NAND 3D TLC (92L) |
PM981a3,500MB/sCapacity 512GB |
Sequential Read 3.5GB/s |
Sequential Write 2.9GB/s |
Rand Read IOPS 460K IOPS |
Rand Write IOPS 500K IOPS |
Form Factor M.2-2280 |
M.2 Size 2280 |
M.2 Key M |
M.2 Type S3 |
Interface PCIe 3.0 x4 |
Protocol NVMe 1.3 |
Designer Samsung |
Model Phoenix |
Part Number S4LR020 |
Foundry Samsung |
Process Node 14nm |
Cores 5 |
DRAM Size 512MB |
DRAM Type LPDDR4 |
DRAM Bus Width 32-bit |
Speed 3733MT/s |
Manufacturer Samsung |
Codename V-NAND V5 |
Process Node 20nm |
Type 3D TLC (92L) |
Layers 92L |
Die Size 102mm² |
Die Capacity 512Gbit |
Die Bit Density 5.04Gbit/mm² |
NAND Die Count 8 |
AES-128 Yes |
AES-256 Yes |
TCG Opal 2.0 Yes |
IEEE 1667 Yes |
Power Loss Protection No |
Avg Power 5.6W |
Sleep Power 3mW |
Max Op Temp 70°C |
Min Non-Op Temp -40°C |
Max Non-Op Temp 85°C |
Height 22mm (0.87")Width 80mm (3.15")Depth 2.4mm (0.09") |
Weight 8g |
Manufacturer Samsung |
Model PM981a |
Description 512GB M.2-2280 |
Part Number MZVLB512HBJQ |
Release Date Sep 28, 2020 |