Storage Comparison
Capacity 256GB |
Sequential Read 6.4GB/s |
Sequential Write 2.7GB/s |
Form Factor M.2-2280 |
Interface PCIe |
Protocol NVMe |
Controller Elpis |
NAND 3D TLC (128L) |
Capacity 256GB |
Sequential Read 6.4GB/s |
Sequential Write 2.7GB/s |
Rand Read IOPS 500K IOPS |
Rand Write IOPS 600K IOPS |
Form Factor M.2-2280 |
M.2 Size 2280 |
M.2 Key M |
M.2 Type S3 |
Interface PCIe 4.0 x4 |
Protocol NVMe 1.3 |
Designer Samsung |
Model Elpis |
Part Number S4LV003 |
Foundry Samsung |
Process Node 8nm |
Cores 5 |
DRAM Size 512MB |
DRAM Type LPDDR4 |
DRAM Bus Width 32-bit |
Speed 3733MT/s |
DRAM Bandwidth 14.93GB/s |
Manufacturer Samsung |
Codename V-NAND V6 |
Process Node 20nm |
Type 3D TLC (128L) |
Layers 128L |
Die Size 74mm² |
Die Capacity 512Gbit |
Die Bit Density 6.96Gbit/mm² |
NAND Die Count 4 |
AES-128 Yes |
AES-256 Yes |
TCG Opal 2.0 Yes |
IEEE 1667 Yes |
Max Op Temp 70°C |
Min Non-Op Temp -40°C |
Max Non-Op Temp 85°C |
Height 22 mm (0.87")Width 80 mm (3.15")Depth 2.4 mm (0.09") |
Weight 9 g |
Manufacturer Samsung |
Model PM9A1 |
Description 256GB M.2-2280 |
Part Number MZVL2256HCLR |
Release Date Sep 22, 2020 |
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