Storage Comparison
Capacity 1TB |
Sequential Read 6GB/s |
Sequential Write 5.6GB/s |
Form Factor M.2-2280 |
Interface PCIe |
Protocol NVMe |
NAND 3D TLC (176L) |
Capacity 1TB |
Sequential Read 6GB/s |
Sequential Write 5.6GB/s |
Rand Read IOPS 900K IOPS |
Rand Write IOPS 1,000K IOPS |
Form Factor M.2-2280 |
M.2 Size 2280 |
M.2 Key M |
M.2 Type S3 |
Interface PCIe 4.0 x4 |
Protocol NVMe 1.3 |
Manufacturer Samsung |
Codename V-NAND V7 |
Process Node 20nm |
Type 3D TLC (176L) |
Layers 176L |
Die Size 47mm² |
Die Capacity 512Gbit |
Die Bit Density 10.87Gbit/mm² |
NAND Chip Count 2 |
NAND Die Count 16 |
NAND Dies/Chip 8 |
AES-128 Yes |
AES-256 Yes |
TCG Opal 2.0 Yes |
IEEE 1667 Yes |
Power Loss Protection No |
Height 22mm (0.87")Width 80mm (3.15")Depth 2.3mm (0.09") |
Weight 10g |
Manufacturer Samsung |
Model PM9C1a |
Description 1TB M.2-2280 |
Part Number MZVL21T0HDLU |
Release Date Jan 12, 2023 |