Storage Comparison
Capacity 512GB |
Sequential Read 2.1GB/s |
Sequential Write 1.5GB/s |
Form Factor M.2 |
Interface PCIe |
Protocol AHCI |
Controller UBX |
NAND MLC |
Capacity 512GB |
Sequential Read 2.1GB/s |
Sequential Write 1.5GB/s |
Rand Read IOPS 90K IOPS |
Rand Write IOPS 70K IOPS |
Form Factor M.2 |
M.2 Size 2280 |
M.2 Key M |
M.2 Type S3 |
Interface PCIe 3.0 x4 |
Protocol AHCI |
Designer Samsung |
Model UBX |
Part Number S4LN058A01 |
Foundry Samsung |
Process Node 32nm |
Cores 3 |
Clock 500 MHz |
DRAM Size 512MB |
DRAM Type LPDDR3 |
DRAM Bus Width 32-bit |
Speed 3200MT/s |
DRAM Bandwidth 12.8GB/s |
Manufacturer Samsung |
Process Node 19nm |
Type MLC |
Die Size 130mm² |
Die Capacity 64Gbit |
Die Bit Density 0.49Gbit/mm² |
NAND Chip Count 4 |
NAND Die Count 64 |
NAND Dies/Chip 16 |
AES-128 Yes |
AES-256 Yes |
TCG Opal 2.0 Yes |
IEEE 1667 No |
Power Loss Protection No |
MTBF 1.5M hours |
Burst Power 6.5W |
Idle Power 50mW |
Sleep Power 2mW |
Max Op Temp 70°C |
Min Non-Op Temp -40°C |
Max Non-Op Temp 85°C |
Height 22 mm (0.87")Width 80 mm (3.15")Depth 2.4 mm (0.09") |
Weight 8 g |
Manufacturer Samsung |
Model SM951 |
Description 512GB M.2 |
Release Date Feb 24, 2015 |
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