Storage Comparison
Capacity 1TB |
Sequential Read 3.2GB/s |
Sequential Write 1.8GB/s |
Form Factor M.2-2280 |
Interface PCIe |
Protocol NVMe |
Controller Polaris |
NAND 3D MLC (48L) |
Capacity 1TB |
Sequential Read 3.2GB/s |
Sequential Write 1.8GB/s |
Rand Read IOPS 450K IOPS |
Rand Write IOPS 320K IOPS |
Form Factor M.2-2280 |
M.2 Size 2280 |
M.2 Key M |
M.2 Type S3 |
Interface PCIe 3.0 x4 |
Protocol NVMe 1.2 |
Designer Samsung |
Model Polaris |
Part Number S4LP077X01 |
Foundry Samsung |
Process Node 28nm |
Cores 5 |
DRAM Size 1GB |
DRAM Type LPDDR3 |
DRAM Bus Width 32-bit |
Speed 1866MT/s |
DRAM Bandwidth 7.46GB/s |
Manufacturer Samsung |
Codename V-NAND V3 |
Process Node 20nm |
Type 3D MLC (48L) |
Layers 48L |
Die Size 125mm² |
Die Capacity 256Gbit |
Die Bit Density 2.04Gbit/mm² |
NAND Chip Count 2 |
NAND Die Count 32 |
NAND Dies/Chip 16 |
AES-128 Yes |
AES-256 Yes |
TCG Opal 2.0 Yes |
IEEE 1667 Yes |
Write Endurance 800TBW |
MTBF 1.5M hours |
Avg Power 5.3W |
Idle Power 40mW |
Sleep Power 5mW |
Max Op Temp 70°C |
Min Non-Op Temp -45°C |
Max Non-Op Temp 85°C |
Height 22 mm (0.87")Width 80 mm (3.15")Depth 2.4 mm (0.09") |
Weight 8 g |
Manufacturer Samsung |
Model SM961 |
Description 1TB M.2-2280 |
Part Number MZVKW1T0HMLH |
Release Date Apr 15, 2016 |
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