Storage Comparison
Capacity 512GB |
Sequential Read 5GB/s |
Sequential Write 4.5GB/s |
Form Factor M.2-2230 |
Interface PCIe |
Protocol NVMe |
Controller SM2269XT |
NAND 3D TLC (176L) |
Capacity 512GB |
Sequential Read 5GB/s |
Sequential Write 4.5GB/s |
Rand Read IOPS 840K IOPS |
Rand Write IOPS 850K IOPS |
Form Factor M.2-2230 |
M.2 Size 2230 |
M.2 Key M |
M.2 Type S3 |
Interface PCIe 4.0 x4 |
Protocol NVMe 1.4 |
Designer Silicon Motion |
Model SM2269XT |
Part Number SM2269XT |
Foundry TSMC |
Process Node 12nm |
Cores 2 |
Clock 650 MHz |
DRAM Type N/A |
Manufacturer SK hynix |
Codename V-NAND V7 |
Process Node 20nm |
Type 3D TLC (176L) |
Layers 176L |
Die Size 47mm² |
Die Capacity 512Gbit |
Die Bit Density 11.01Gbit/mm² |
NAND Chip Count 1 |
NAND Die Count 8 |
NAND Dies/Chip 8 |
AES-128 Yes |
AES-256 Yes |
TCG Opal 2.0 Yes |
MTBF 1.5M hours |
Burst Power 4.5W |
Idle Power 50mW |
Max Op Temp 70°C |
Min Non-Op Temp -40°C |
Max Non-Op Temp 85°C |
Height 22 mm (0.87")Width 30 mm (1.18")Depth 2.4 mm (0.09") |
Manufacturer SK hynix |
Model BC901 |
Description 512GB M.2-2230 |
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