Storage Comparison
Capacity 1TB |
Sequential Read 6.5GB/s |
Sequential Write 5.5GB/s |
Form Factor M.2-2280 |
Interface PCIe |
Protocol NVMe |
NAND 3D TLC (238L) |
Capacity 1TB |
Sequential Read 6.5GB/s |
Sequential Write 5.5GB/s |
Rand Read IOPS 950K IOPS |
Rand Write IOPS 1,200K IOPS |
Form Factor M.2-2280 |
M.2 Size 2280 |
M.2 Key M |
M.2 Type S3 |
Interface PCIe 4.0 x4 |
Protocol NVMe 1.4 |
DRAM Type N/A |
Manufacturer SK hynix |
Codename V-NAND V8 |
Process Node 20nm |
Type 3D TLC (238L) |
Layers 238L |
Die Size 36mm² |
Die Capacity 512Gbit |
Die Bit Density 14.39Gbit/mm² |
NAND Chip Count 2 |
NAND Die Count 16 |
NAND Dies/Chip 8 |
AES-128 Yes |
AES-256 Yes |
TCG Opal 2.0 Yes |
MTBF 1.5M hours |
Max Op Temp 70°C |
Min Non-Op Temp -40°C |
Max Non-Op Temp 85°C |
Height 22 mm (0.87")Width 80 mm (3.15")Depth 2.4 mm (0.09") |
Manufacturer SK hynix |
Model PVC10 |
Description 1TB M.2-2280 |
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