Toshiba BG3

BG3

512GB Soldered

Storage Comparison

Capacity
512GB
Sequential Read
1.5GB/s
Sequential Write
1.1GB/s
Form Factor
Soldered
Interface
PCIe
Protocol
NVMe
NAND
3D TLC (64L)

BG3BG31,520MB/s
x1

Capacity
512GB

Sequential Read
1.5GB/s
Sequential Write
1.1GB/s

Form Factor
Soldered

Interface
PCIe 3.0 x2
Protocol
NVMe 1.2

Manufacturer
Kioxia
Codename
BiCS3
Process Node
19nm
Type
3D TLC (64L)
Layers
64L
Die Size
132mm²
Die Capacity
512Gbit
Die Bit Density
3.88Gbit/mm²
NAND Die Count
8

MTBF
1.5M hours

Avg Power
3.3W
Sleep Power
5mW

Manufacturer
Toshiba
Model
BG3
Description
512GB Soldered
Part Number
KBG30ZMS512G