Storage Comparison
Capacity 512GB |
Sequential Read 2.4GB/s |
Sequential Write 1.8GB/s |
Form Factor M.2-2230 |
Interface PCIe |
Protocol NVMe |
NAND 3D TLC (96L) |
Capacity 512GB |
Sequential Read 2.4GB/s |
Sequential Write 1.8GB/s |
Rand Read IOPS 315K IOPS |
Rand Write IOPS 230K IOPS |
Form Factor M.2-2230 |
M.2 Size 2230 |
M.2 Key M |
M.2 Type S3 |
Interface PCIe 3.0 x4 |
Protocol NVMe 1.4 |
Manufacturer Kioxia |
Codename BiCS4 |
Process Node 19nm |
Type 3D TLC (96L) |
Layers 96L |
Die Size 86mm² |
Die Capacity 512Gbit |
Die Bit Density 5.95Gbit/mm² |
NAND Die Count 8 |
Write Endurance 300TBW |
MTBF 1.75M hours |
Avg Power 7.5W |
Idle Power 20mW |
Sleep Power 3.3mW |
Max Op Temp 70°C |
Min Non-Op Temp -55°C |
Max Non-Op Temp 85°C |
Height 22 mm (0.87")Width 30 mm (1.18")Depth 2.4 mm (0.09") |
Weight 3.2 g |
Manufacturer WD |
Model SN530 |
Description 512GB M.2-2230 |
Part Number SDBPTPZ-512G |
Warranty 5 years |
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