Apple M2 (8C9G-FL) vs Qualcomm Snapdragon 8 Gen 1 Full Specs
8 Cores(4P+4E) 8 Threads(4P+4E) 3.49GHz | 8 Cores(1P+3M+4E) 8 Threads(1P+3M+4E) 3GHz |
TDP 15W | TDP 5W |
Bandwidth 102.4GB/s LPDDR5 | Bandwidth 51.2GB/s LPDDR5 |
iGPU | iGPU |
·· 3.22 TFLOPSFP16 | ·· 3.35 TFLOPSFP16 |
M2 (8C9G-FL)2,500
Snapdragon 8 Gen 11,3118 Cores 4P - 4E | 8 Cores 1P 3M 4E |
8 Threads 4P - 4E | 8 Threads 1P 3M 4E |
Base Clock 3.49GHz | Base Clock 3GHz |
Overclocking Locked | Overclocking Locked |
L1i 192KB P - 128KB E | L1i 64KB P 64KB M 32KB E |
L1d 128KB P - 64KB E | L1d 64KB P 64KB M 32KB E |
L2 16MB P shared 4MB E shared | L2 1MB P 512KB M 128KB E - - |
L3 - | L3 6MB |
SLC Cache 8MB | SLC Cache 4MB |
Type LPDDR5 | Type LPDDR5 |
Max Memory 24GB | Max Memory 24GB |
ECC No | ECC No |
Channels 2 | Channels 4 |
Bus Width 128-bit | Bus Width 64-bit |
Speed 6400MT/s | Speed 6400MT/s |
Bandwidth 102.4GB/s | Bandwidth 51.2GB/s |
Bandwidth Calculator Channels Transfer Rate Calculated Bandwidth 102.4GB/s | Bandwidth Calculator Channels Transfer Rate Calculated Bandwidth 51.2GB/s |
TDP 15W | TDP 5W |
Max Operating Temp 100°C Max | Max Operating Temp - |
PCIe PCIe 4.0 x611.8GB/sBandwidth | - |
iGPU | iGPU |
Shaders 1152 | Shaders 1024 |
Boost Clock 1.4GHz | Boost Clock 818MHz |
·· 3.22 TFLOPSFP16 | ·· 3.35 TFLOPSFP16 |
NPU Model H14 Bia | NPU Model Hexagon |
NPU Cores 16 | NPU Cores - |
NPU Clock 2.1GHz | NPU Clock - |
Performance 15.8 TOPSFP16 | Performance 52 TOPSINT4 |
Modem Model - | Modem Model X65 |
Cellular - | Cellular 5G mmWave |
Peak Down - | Peak Down Up to 10.0Gbps |
Peak Up - | Peak Up Up to 3.0Gbps |
Manufacturer | Manufacturer |
ISA AArch64 | ISA AArch64 |
Architecture Apple Silicon 11ARMv8.5-A | Architecture KryoARMv9.0-A |
Family | Family |
Branding  | Branding  |
Codename Staten M2Variant AvalancheP-Core - BlizzardE-Core | Codename - Snapdragon 8 Gen 1Variant Cortex-X2P-Core Cortex-A710M-Core Cortex-A510E-Core |
Market Segment Tablet | Market Segment Smartphone |
Release Date May 7, 2024 | Release Date Oct 5, 2021 |
Foundry TSMC | Foundry Samsung |
Fabrication Node N5P | Fabrication Node 4LPE |
Die Size 153mm² | Die Size 129mm² |
Transistor Count 20.1 Billion | Transistor Count - |
Transistor Density 131 MTr/mm² | Transistor Density - |
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