Qualcomm Snapdragon 8 Gen 1 vs Apple M3 (8C9G-FL) Full Specs
8 Cores(1P+3M+4E) 8 Threads(1P+3M+4E) 3GHz | 8 Cores(4P+4E) 8 Threads(4P+4E) 4.05GHz |
TDP 5W | TDP 15W |
Bandwidth 51.2GB/s LPDDR5 | Bandwidth 102.4GB/s LPDDR5 |
iGPU | iGPU |
·· 3.35 TFLOPSFP16 | ·· 3.08 TFLOPSFP16 |
Snapdragon 8 Gen 11,311
M3 (8C9G-FL)3,1308 Cores 1P 3M 4E | 8 Cores 4P - 4E |
8 Threads 1P 3M 4E | 8 Threads 4P - 4E |
Base Clock 3GHz | Base Clock 4.05GHz |
Overclocking Locked | Overclocking Locked |
L1i 64KB P 64KB M 32KB E | L1i 192KB P - 128KB E |
L1d 64KB P 64KB M 32KB E | L1d 128KB P - 64KB E |
L2 1MB P 512KB M 128KB E - - | L2 16MB P shared 4MB E shared |
L3 6MB | L3 - |
SLC Cache 4MB | SLC Cache 8MB |
Type LPDDR5 | Type LPDDR5 |
Max Memory 24GB | Max Memory 24GB |
ECC No | ECC No |
Channels 4 | Channels 2 |
Bus Width 64-bit | Bus Width 128-bit |
Speed 6400MT/s | Speed 6400MT/s |
Bandwidth 51.2GB/s | Bandwidth 102.4GB/s |
Bandwidth Calculator Channels Transfer Rate Calculated Bandwidth 51.2GB/s | Bandwidth Calculator Channels Transfer Rate Calculated Bandwidth 102.4GB/s |
TDP 5W | TDP 15W |
Max Operating Temp - | Max Operating Temp 100°C Max |
- | PCIe PCIe 4.0 x611.8GB/sBandwidth |
iGPU | iGPU |
Shaders 1024 | Shaders 1152 |
Boost Clock 818MHz | Boost Clock 1.34GHz |
·· 3.35 TFLOPSFP16 | ·· 3.08 TFLOPSFP16 |
NPU Model Hexagon | NPU Model H15 Themis |
NPU Cores - | NPU Cores 16 |
NPU Clock - | NPU Clock 2.36GHz |
Performance 52 TOPSINT4 | Performance 18 TOPSFP16 |
Modem Model X65 | Modem Model - |
Cellular 5G mmWave | Cellular - |
Peak Down Up to 10.0Gbps | Peak Down - |
Peak Up Up to 3.0Gbps | Peak Up - |
Manufacturer | Manufacturer |
ISA AArch64 | ISA AArch64 |
Architecture KryoARMv9.0-A | Architecture Apple Silicon 13ARMv8.6-A |
Family | Family |
Branding  | Branding  |
Codename - Snapdragon 8 Gen 1Variant Cortex-X2P-Core Cortex-A710M-Core Cortex-A510E-Core | Codename Ibiza M3Variant EverestP-Core - Sawtooth E-Core |
Market Segment Smartphone | Market Segment Tablet |
Release Date Oct 5, 2021 | Release Date Mar 4, 2025 |
Foundry Samsung | Foundry TSMC |
Fabrication Node 4LPE | Fabrication Node N3B |
Die Size 129mm² | Die Size 153mm² |
Transistor Count - | Transistor Count 25 Billion |
Transistor Density - | Transistor Density 164 MTr/mm² |
No images available
No images available