NVIDIA GeForce RTX 2050 vs Qualcomm Adreno X2-90 7T Full Specs
2,048 Shaders 1.48GHz | 2,048 Shaders 1.7GHz |
4GB GDDR6112GB/s placeholder | Shared Memory152.4GB/sLPDDR5X |
·· 6.05 TFLOPS | ·· 6.96 TFLOPS |
Form Factor Soldered | Form Factor iGPU |
TDP 45W | TDP 15W |
Clock Speed ··· | Clock Speed ·· |
Peak OPS 193.6 TOPSINT4 Tensor Sparse | Peak OPS 13.93 TFLOPSFP16 |
Tensor FP16-16 24.2 TFLOPSFP16-16 Tensor Sparse 48.4 TFLOPSTensor FP16-32 12.1 TFLOPSFP16-32 Tensor Sparse 24.2 TFLOPS | - |
BF16 6.05 TFLOPSTensor BF16 12.1 TFLOPSBF16 Tensor Sparse 24.2 TFLOPS | BF16 13.93 TFLOPSTensor BF16 -BF16 Tensor Sparse - |
Tensor TF32 6.05 TFLOPS | Tensor TF32 - |
FP32 6.05 TFLOPS | FP32 6.96 TFLOPS |
FP64 94.53 GFLOPS | FP64 1.74 TFLOPS |
Tensor INT4 96.8 TOPS | Tensor INT4 - |
Tensor INT8 48.4 TOPS | - |
Ray 9.12 TOPS | Ray - |
Pixel Rate 47.3 GPixel/s | Pixel Rate 108.8 GPixel/s |
Texture Rate 94.5 GTexel/s | Texture Rate 217.6 GTexel/s |
Shaders 2,048 Shaders | Shaders 2,048 Shaders |
TMUs 64 TMUs | TMUs 128 TMUs |
ROPs 32 ROPs | ROPs 64 ROPs |
Tensor Cores 64 T-Cores | Tensor Cores - |
RT Cores 16 RT-Cores | RT Cores - |
SMs 16 SMs | EUs 16 EUs |
Base Clock 1.16GHz | Base Clock - |
Boost Clock 1.48GHz | Boost Clock 1.7GHz |
L2 Cache 2MB shared | L2 Cache 2MB shared |
L3 Cache - | L3 Cache 21MB shared |
4GB GDDR6 placeholder | Shared MemoryLPDDR5X |
Memory Bus 64-bit | Memory Bus 128-bit |
Memory Speed 14GT/s | Memory Speed 9.5GT/s |
Memory Bandwidth 112GB/s | Memory Bandwidth 152.4GB/s |
TDP 45W | TDP 15W |
Multi-Monitor 4 | Multi-Monitor 3 |
HDCP HDCP 2.3 | HDCP - |
Encoder Model NVENC 7 | Encoder Model Hexagon AV1 |
Decoder Model NVDEC 5 | Decoder Model Hexagon AV1 |
Form Factor Soldered | Form Factor iGPU |
Manufacturer | Manufacturer |
Chip Designer | Chip Designer |
Architecture | Architecture |
Family | Family |
Branding ![]() | Branding ![]() |
Codename NV177 | Codename - |
Chip Variant GA107-140-A1 | Chip Variant - |
Market Segment Laptop | Market Segment Laptop |
Release Date Dec 17, 2021 | Release Date Sep 24, 2025 |
Foundry Samsung | Foundry TSMC |
Fabrication Node 8N | Fabrication Node N3E |
Die Size 200mm² | Die Size 288mm² |
Transistor Count 8.7 Billion | Transistor Count - |
Transistor Density 43.5 MTr/mm² | Transistor Density - |
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