AMD Radeon Pro WX 3200M vs NVIDIA GeForce RTX 3080 Laptop 120W Full Specs
640 Shaders 1.29GHz | 6,144 Shaders 1.57GHz |
4GB GDDR564GB/s | 16GB GDDR6448GB/s |
·· 1.66 TFLOPS | ·· 19.35 TFLOPS |
Form Factor Soldered | Form Factor Soldered |
TDP 65W | TDP 120W |
Clock Speed ··· | Clock Speed ··· |
Peak OPS 1.66 TFLOPSFP16 | Peak OPS 619.3 TOPSINT4 Tensor Sparse |
- | Tensor FP16-16 77.41 TFLOPSFP16-16 Tensor Sparse 154.8 TFLOPSTensor FP16-32 38.71 TFLOPSFP16-32 Tensor Sparse 77.41 TFLOPS |
- | BF16 19.35 TFLOPSTensor BF16 38.71 TFLOPSBF16 Tensor Sparse 77.41 TFLOPS |
Tensor TF32 - | Tensor TF32 19.35 TFLOPS |
FP32 1.66 TFLOPS | FP32 19.35 TFLOPS |
FP64 103.6 GFLOPS | FP64 302.4 GFLOPS |
Tensor INT4 - | Tensor INT4 309.7 TOPS |
- | Tensor INT8 154.8 TOPS |
Ray - | Ray 29.19 TOPS |
Pixel Rate 20.7 GPixel/s | Pixel Rate 151.2 GPixel/s |
Texture Rate 41.4 GTexel/s | Texture Rate 302.4 GTexel/s |
Shaders 640 Shaders | Shaders 6,144 Shaders |
TMUs 32 TMUs | TMUs 192 TMUs |
ROPs 16 ROPs | ROPs 96 ROPs |
Tensor Cores - | Tensor Cores 192 T-Cores |
RT Cores - | RT Cores 48 RT-Cores |
CUs 10 CUs | SMs 48 SMs |
Base Clock 1.08GHz | Base Clock 1.16GHz |
Boost Clock 1.29GHz | Boost Clock 1.57GHz |
L2 Cache 512KB shared | L2 Cache 4.1MB shared |
4GB GDDR5 | 16GB GDDR6 |
Memory Bus 128-bit | Memory Bus 256-bit |
Memory Speed 4GT/s | Memory Speed 14GT/s |
Memory Bandwidth 64GB/s | Memory Bandwidth 448GB/s |
TDP 65W | TDP 120W |
Multi-Monitor 3 | Multi-Monitor 3 |
HDCP HDCP 2.2 | HDCP HDCP 2.3 |
Encoder Model VCE 3.4 | Encoder Model NVENC 7 |
Decoder Model UVD 6.3 | Decoder Model NVDEC 5 |
Form Factor Soldered | Form Factor Soldered |
Manufacturer | Manufacturer |
Chip Designer | Chip Designer |
Architecture | Architecture |
Family | Family |
Branding ![]() | Branding ![]() |
Codename Lexa | Codename NV174 |
Chip Variant Polaris 23 XLM | Chip Variant GA104-150-A1 |
Market Segment Laptop | Market Segment Laptop |
Release Date Mar 1, 2017 | Release Date Jan 12, 2021 |
Foundry GlobalFoundries | Foundry Samsung |
Fabrication Node 14LPP | Fabrication Node 8N |
Die Size 103mm² | Die Size 393mm² |
Transistor Count 2.2 Billion | Transistor Count 17.4 Billion |
Transistor Density 21.36 MTr/mm² | Transistor Density 44.33 MTr/mm² |
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